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| TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSHG6200 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines high speed with high radiant power at wavelength of 850 nm. Features * High modulation bandwidth * Extra high radiant power and radiant intensity * Low forward voltage * * * * * * * * Suitable for high pulse current operation Standard package T-13/4 ( 5 mm) Angle of half intensity = 10 Peak wavelength p = 850 nm High reliability Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 8390 Applications Infrared radiation source for CMOS cameras (illumination). High speed IR data transmission. Parts Table Part TSHG6200 Remarks MOQ: 4000 pc Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t 5 sec, 2 mm from case tp/T = 0.5, tp = 100 s tp = 100 s Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1 250 100 - 40 to + 85 - 40 to + 100 260 300 Unit V mA mA A mW C C C C K/W Basic Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Document Number 81078 Rev. 1.3, 08-Mar-05 Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA Symbol VF VF TKVF Min Typ. 1.5 2.3 -2.1 Max 1.8 Unit V V mV/K www.vishay.com 1 TSHG6200 Vishay Semiconductors Parameter Reverse Current Junction capacitance Radiant Intensity Radiant Power Temp. Coefficient of e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of p Rise Time Fall Time Cut-Off Frequency Virtual Source Diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 100 mA Test condition Symbol IR Cj Ie Ie e TKe p TKp tr tf fc 80 125 160 1600 50 -0.35 10 850 40 0.25 20 13 20 3.7 400 Min Typ. Max 10 VISHAY Unit A pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm Typical Characteristics (Tamb = 25 C unless otherwise specified) 300 1000 PV -Power Dissipation (mW) I F -Forward Current ( mA ) t p/ T= 0.01 0.02 Tamb < 50 0.05 0.1 250 200 RthJA 150 100 50 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 0.2 0.5 100 0.01 16031 0.1 1.0 10 100 16647 tp - Pulse Duration ( ms ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 3. Pulse Forward Current vs. Pulse Duration 200 I F - Forward Current ( mA ) 1000 175 I F-Forward Current ( mA ) 150 125 100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) RthJA 100 t p = 100 s t p / T = 0.001 10 1 0 18873 1 2 3 4 16964 VF - Forward Voltage ( V ) Figure 2. Forward Current vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 81078 Rev. 1.3, 08-Mar-05 VISHAY TSHG6200 Vishay Semiconductors 0 10 20 1000 I e - Radiant Intensity ( mW/sr ) Ie rel - Relative Radiant Intensity 30 100 40 1.0 0.9 0.8 0.7 50 60 70 80 10 1 0.1 1 16032 10 100 1000 15989 0.6 0.4 0.2 0 0.2 0.4 0.6 I F - Forward Current ( mA ) Figure 5. Radiant Intensity vs. Forward Current Figure 8. Relative Radiant Intensity vs. Angular Displacement 1000.0 Radiant Power ( mW ) e- 100.0 10.0 1.0 0.1 1 16971 10 100 1000 IF - Forward Current ( mA ) Figure 6. Radiant Power vs. Forward Current 1.25 F e, rel -Relative Radiant Power 1.0 0.75 0.5 0.25 0 800 850 900 16972 l - Wavelength ( nm ) Figure 7. Relative Radiant Power vs. Wavelength Document Number 81078 Rev. 1.3, 08-Mar-05 www.vishay.com 3 TSHG6200 Vishay Semiconductors Package Dimensions in mm VISHAY 95 10917 www.vishay.com 4 Document Number 81078 Rev. 1.3, 08-Mar-05 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. TSHG6200 Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81078 Rev. 1.3, 08-Mar-05 www.vishay.com 5 |
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